Method of manufacturing semiconductor device, semiconductor...

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

Reexamination Certificate

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C250S492230, C250S492200, C250S3960ML

Reexamination Certificate

active

11284035

ABSTRACT:
A manufacturing apparatus of a semiconductor device is disclosed, which comprises an implantation source which applies particles or an electromagnetic wave into an implantation region of a semiconductor substrate in a θ direction shifted by an angle θ from a vertical direction of the semiconductor substrate, a first stencil mask disposed between the semiconductor substrate and the implantation source, the first stencil mask having a first opening corresponding in the θ direction to the implantation region, and a second stencil mask disposed between the first stencil mask and the implantation source, the second stencil mask having a second opening corresponding in the θ direction to the implantation region.

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patent: 4524278 (1985-06-01), Le Poole
patent: 4560878 (1985-12-01), Knauer et al.
patent: 5838058 (1998-11-01), Kitajima et al.
patent: 6214498 (2001-04-01), Choi
patent: 2002/0058400 (2002-05-01), Suguro et al.
patent: 49-68660 (1974-07-01), None
patent: 2002-203806 (2002-07-01), None
patent: 2002-237447 (2002-08-01), None
patent: WO 02/052662 (2002-07-01), None

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