Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1980-08-26
1983-07-19
Ozaki, G.
Metal working
Method of mechanical manufacture
Assembling or joining
29576E, 29576W, 29578, 29580, 148175, 148187, 156662, H01L 21223
Patent
active
043935737
ABSTRACT:
The semiconductor device is provided with semiconductor elements having the complementary characteristics and high breakdown strength. These semiconductor elements are formed in N and P islands respectively each having an inverted frustum shape.
Surfaces of the frustum are inclined by an angle determined by semiconductor crystal structure. Side and bottom surfaces of the islands are formed adjacent to an insulating layer and both islands are supported part from the polycrystalline semiconductor layer. All side and bottom surfaces of the islands adjacent the insulating layer are made of high impurity substance of the same type as respective islands.
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Lee, J. of Applied Physics, vol. 40, No. 1, Oct. 1969, pp. 4569-4574.
Kato Kotaro
Sakurai Tetsuma
Nippon Telegraph & Telephone Public Corporation
Ozaki G.
Pfund Charles E.
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