Fishing – trapping – and vermin destroying
Patent
1993-08-05
1994-10-18
Thomas, Tom
Fishing, trapping, and vermin destroying
437918, 437919, 437 47, 437200, 148DIG136, H01L 2170
Patent
active
053568265
ABSTRACT:
A semiconductor integrated circuit including a MOSFET having a polycide gate structure, a resistor and a capacitor thereon is manufactured. Polycrystalline silicon film and a dielectric film are consecutively deposited. After processes of patterning and etching the dielectric film, the remaining dielectric films are used as a etching protection mask for the resistor and a capacitor insulating film for the capacitor. Then, a refractory metal silicide for a polycide gate is uniformly deposited over the remaining dielectric films. Then, the refractory metal silicide and polycrystalline silicon are consecutively etched over a patterned resist and the remaining dielectric films to simultaneously form the polycide gate, resistor and capacitor. Thus, a resistor having a precise resistance value is manufactured in a MOSFET device having a polycide gate without excessive steps.
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Nguyen Tuan
Thomas Tom
Yamaha Corporation
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