Method of manufacturing semiconductor device, plasma...

Details Method of manufacturing semiconductor device, plasma... Method of manufacturing semiconductor device, plasma...

2005-05-24

2005-05-24

Nguyen, Thanh (Department: 2813)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

C438S462000, C438S464000, C438S710000, C438S977000

Reexamination Certificate

active

06897128

ABSTRACT:
In a method of manufacturing a semiconductor device by dividing a semiconductor wafer6,on which a plurality of semiconductor elements are formed, into individual pieces of the semiconductor elements, after thickness of a reverse face of a circuit formation face6ais reduced by machining, a mask to determine cutting lines31bis formed by a resist film31a,and the semiconductor wafer6is divided into individual pieces of semiconductor elements6cby conducting plasma etching on portions of the cutting lines31bwhen plasma is exposed from the mask side, and then the resist film31ais removed by plasma, and further a micro-crack layer6bgenerated on the machined face is removed by plasma etching. A series of the above plasma processing is executed by the same plasma processing apparatus.

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