Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2007-10-30
2007-10-30
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000, C257S758000, C257S774000, C257S775000, C257SE29314
Reexamination Certificate
active
11061442
ABSTRACT:
Exemplary embodiments of the present invention are intended to provide a semiconductor device that can readily address or achieve high integration. Exemplary embodiments provide a semiconductor device constructed to include a transistor and a multi-layer wiring structure electrically connected to the transistor, the multi-layer wiring structure having a first wiring layer disposed in the same layer as the semiconductor layer of the transistor.
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patent: 2001/0019130 (2001-09-01), Yamazaki et al.
patent: 2003/0134519 (2003-07-01), Yudasaka et al.
patent: A 5-150264 (1993-06-01), None
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