Method of manufacturing semiconductor device isolation region

Details Method of manufacturing semiconductor device isolation region Method of manufacturing semiconductor device isolation region

1994-04-20

1996-07-23

Fourson, George

Fishing, trapping, and vermin destroying

H01L 2176

Patent

active

055389163

ABSTRACT:
The present invention aims to prevent formation of a bird's beak and a bird's head in forming a miniaturized element isolation oxide film, and to suppress introduction of a defect into a silicon substrate. A first silicon oxide film is formed on the surface of a silicon substrate. A polycrystalline silicon film and a first silicon nitride film having an opening are formed on surface of the first silicon oxide film. A second silicon oxide film is deposited on the surface of the first silicon oxide film and the first silicon nitride film so as to cover the inner wall of the opening by a CVD method. A second silicon nitride film formed to cover the surface of the second silicon oxide film is subjected to anisotropical etching, whereby a sidewall nitride film is formed on the surface of the second silicon oxide film so as to cover the sidewall of the opening. With the sidewall nitride film as a mask, an element isolation film is formed at the bottom of the opening.

REFERENCES:
patent: 5248350 (1993-09-01), Lee
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Tomohisa Mizuno et al., "Oxidation Rate Reduction in the Submicrometer LOCOS Process," US period.: IEEE Transactions on Electron Devices, vol. ED-34, No. 11, Nov. 1987, pp. 2255 to 2259.
"Selective Polysilicon Oxidation Technology for Defect Free Isolation", Matsunaga et al., Tech. Dig. Int. Electron Device Meeting 1980, pp. 565-568.
A New Analytical Model of the "Bird's Beak", Guillemot et al., IEEE Transactions on Electron Devices, pp. 1033-1038.
"Influence of Film Stress and Thermal Oxidation on the Generation of Dislocations in Silicon", Bohg et al., Appl. Phys. Lett. 33 (10), 15 Nov. 1978, p. 895.
"A New Isolation Technology for VLSI", Nojiri et al., pp. 337-340, Extended Abstracts of the 17th Conference on Solid State Devices and Materials 1985.
"A Bird's Beak Free Local Oxidation Technology Feasible for VSLI Circuits Fabrication", Kyang Yi Chiu et al., IEEE Transactions on Electron Devices, pp. 536-540 1982.
"The Swami--A Defect Free and Near-Zero Bird's Beak Local Oxidation Process and its Application in VLSI Technology", K. Y. Chiu et al., IEDM 82, pp. 224-227.

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