Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2005-08-23
2005-08-23
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S197000, C438S381000
Reexamination Certificate
active
06933210
ABSTRACT:
The invention provides a technique of allowing fine and high-performance thin film semiconductor elements to be easily formed on a large-sized substrate. A method of manufacturing a semiconductor device includes: forming a peeling layer on a first substrate; forming an insulating film on the peeling layer; forming a plurality of fine holes in the insulating film; forming a semiconductor film on the insulating film and in the fine holes; melting and crystallizing the semiconductor film by a heat treatment to form a crystalline semiconductor film including substantially single-crystalline grains centered substantially on the respective fine holes; forming a semiconductor element T by using the crystalline semiconductor film; and causing peeling at the inside and/or the boundary surface of the peeling layer to separate the semiconductor element T from the first substrate and transferring the semiconductor element to a second substrate.
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patent: 5546375 (1996-08-01), Shimada et al.
patent: 6523236 (2003-02-01), Nishikawa et al.
patent: WO 03/010825 (2003-02-01), None
“Single Crystal Thin Film Transistors”,IBM Technical Disclosure Bulletin, Aug. 1993, p. 257.
R. Ishihara et al. , “Advanced Excimer-Laser Crystallization Techniques of Si Thin-Film For Loacation Control of Large Grain on Glass”, proc. SPIE 2001, vol. 4295, pp. 14-23.
Nhu David
Oliff & Berridg,e PLC
Seiko Epson Corporation
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