Method of manufacturing semiconductor device including substrate

Details Method of manufacturing semiconductor device including substrate Method of manufacturing semiconductor device including substrate

1988-02-26

1990-06-19

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 40, 437162, 437247, 437915, 148DIG12, 148DIG157, 148 335, H01L 21225

Patent

active

049353861

ABSTRACT:
A method of manufacturing a semiconductor device comprising the steps of bringing a mirror-polished surface of a first semiconductor substrate of a first conductivity type into contact with a mirror-polished surface of a second semiconductor substrate of a second conductivity type having an impurity concentration which is lower than that of said first conductivity type, in a clean atmosphere, and thermally heating said first and second semiconductor substrates so that they unite. Impurity is diffused from said first semicondutor substrate into said second semiconductor substrate, thereby forming a diffusion layer of a first conductivity type in said second semiconductor substrate. A total amount of impurity of said diffusion layer is 1.times.10.sup.13 /cm.sup.2 to 2.times.10.sup.15 /cm.sup.2, to form a pn junction in said second semiconductor substrate.

REFERENCES:
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patent: 4700466 (1987-10-01), Nakagawa et al.
patent: 4738935 (1988-04-01), Shimbo et al.
Nakagawa et al, "1800V Biopolar-Mode MOSFETs: a first application of Sillicon Wafer Direct Bonding (SDB) technique to a power device" IEEE IEDM Tech Digest, Dec. 1986, pp. 122-125.
Ghandhi, S. K., VLSI Fabrication Principles John Wiley & Sons, 1983, pp. 321-337.

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