Method of manufacturing semiconductor device including interlayi

Details Method of manufacturing semiconductor device including interlayi Method of manufacturing semiconductor device including interlayi

1992-03-25

1993-10-05

Maples, John S.

Fishing, trapping, and vermin destroying

437195, 437238, 437240, H01L 21441

Patent

active

052504689

ABSTRACT:
The method of forming an interlayer insulating film insulating first and second layers of conductor patterns in a semiconductor device includes the steps of preparing a reaction gas including at least ozone and silicon alkoxide, wherein the ratio of ozone with respect to silicon alkoxide is adjusted to be not less than 5 within the reaction gas, and forming an insulating film by CVD reacting the reaction gas at atmospheric pressure at the temperature of 350.degree. C.- 450.degree. C., whereupon the interlayer insulating film includes at least the insulating film formed by atmospheric pressure CVD reaction.

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