Semiconductor device manufacturing: process – Including control responsive to sensed condition – Optical characteristic sensed
Reexamination Certificate
2005-01-11
2005-01-11
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Including control responsive to sensed condition
Optical characteristic sensed
C438S009000
Reexamination Certificate
active
06841400
ABSTRACT:
The invention relates to improvements in a method of manufacturing a semiconductor device in which deterioration in a transistor characteristic is avoided by preventing a channel stop implantation layer from being formed in an active region. After patterning a nitride film (22), the thickness of an SOI layer3is measured (S2) and, by using the result of measurement, etching conditions (etching time and the like) for SOI layer3are determined (S3). To measure the thickness of SOI layer3, it is sufficient to use spectroscopic ellipsometry which irradiates the surface of a substance with linearly polarized light and observes elliptically polarized light reflected by the surface of a substance. The etching condition determined is used and a trench TR2is formed by using patterned nitride film22as an etching mask (S4).
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Hirano Yuuichi
Iwamatsu Toshiaki
Maeda Shigenobu
Maegawa Shigeto
Matsumoto Takuji
Fourson George
Renesas Technology Corp.
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