Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2006-04-18
2006-04-18
Blum, David S. (Department: 2813)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S427000
Reexamination Certificate
active
07029987
ABSTRACT:
A method of manufacturing a semiconductor device having a shallow trench isolation includes steps of forming a mask layer on a semiconductor substrate, forming a shallow trench in a semiconductor substrate using the mask layer, forming at least one step in the semiconductor substrate at the top of the shallow trench, and then forming a liner layer over the entire surface of the semiconductor substrate so as to line the shallow trench and thereby offer protection during subsequent oxidation. When the mask layer is subsequently removed, the at least one step in the semiconductor substrate allows portions of the liner layer extending outside the shallow trench to be removed without creating problematic dents in the structure.
REFERENCES:
patent: 4916086 (1990-04-01), Takahashi et al.
patent: 5298450 (1994-03-01), Verret
patent: 5801083 (1998-09-01), Yu et al.
patent: 5923993 (1999-07-01), Sahota
patent: 6020230 (2000-02-01), Wu
patent: 6110797 (2000-08-01), Perry et al.
patent: 6150212 (2000-11-01), Divakaruni et al.
patent: 6207532 (2001-03-01), Lin et al.
patent: 6214696 (2001-04-01), Wu
patent: 6274457 (2001-08-01), Sakai et al.
patent: 6383861 (2002-05-01), Gonzalez et al.
Stanley Wolf Silicon Processing for the VSLI Era vol. 2 Lattice Press 1990 p. 45.
Blum David S.
Volentine Francos & Whitt PLLC
LandOfFree
Method of manufacturing semiconductor device having shallow... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing semiconductor device having shallow..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor device having shallow... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3556302