Semiconductor device manufacturing: process – Making passive device – Resistor
Reexamination Certificate
2011-06-21
2011-06-21
Pizarro, Marcos D. (Department: 2814)
Semiconductor device manufacturing: process
Making passive device
Resistor
C257S359000, C257S380000, C257S543000, C257S581000, C382S171000, C382S190000, C382S210000, C382S238000, C382S325000, C382S308000, C382S308000
Reexamination Certificate
active
07964469
ABSTRACT:
In a method of manufacturing a semiconductor device, a first oxide film is formed in a convex shape on a field insulating film, a polycrystalline silicon film is formed on the first oxide film, and impurities are introduced into the polycrystalline silicon film. The polycrystalline silicon film into which the impurity is introduced is patterned so that a portion above the convex-shaped first oxide film becomes a resistance region of the resistor. A second oxide film is then formed on the patterned polycrystalline silicon film followed by the formation of a third oxide film on the second oxide film. The third oxide film and parts of the second oxide film and the polycrystalline silicon film are then removed to form a planarized surface including surface portions of the second oxide film and the polycrystalline silicon film.
REFERENCES:
patent: 4759836 (1988-07-01), Hill et al.
patent: 09-307062 (1997-11-01), None
Adams & Wilks
Montalvo Eva Yan
Pizarro Marcos D.
Seiko Instruments Inc.
LandOfFree
Method of manufacturing semiconductor device having resistor... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing semiconductor device having resistor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor device having resistor... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2655943