Fishing – trapping – and vermin destroying
Patent
1991-01-14
1993-05-25
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437 8, 156636, 156637, 156645, 156626, H01L 21302, H01L 21463
Patent
active
052140016
ABSTRACT:
A manufacturing method of a semiconductor device having a planar single crystal semiconductor surface is disclosed. In the manufacturing method of a semiconductor device, an insulating film is formed on a semiconductor substrate, a noncrystal semiconductor film is formed on the insulating film, a stripe-like anti-reflection film is formed on the noncrystal semiconductor film, and laser beam is irradiated along the anti-reflection film. Because of the difference in temperature, a film with thicknesses different in a substrate region in which the anti-reflection film is formed and a region around it is formed. A film to be a machining allowance for polishing is formed on the single crystal semiconductor film, polishing is performed from the side of said film to be a machining allowance for polishing so that desired planar film thickness of the single crystal semiconductor film is implemented.
REFERENCES:
patent: 4631804 (1986-12-01), Roy
patent: 4879258 (1989-11-01), Fisher
patent: 4933298 (1990-06-01), Hasegawa
patent: 4962064 (1990-10-01), Haskell et al.
Ipposhi Takashi
Sugahara Kazuyuki
Chaudhuri Olik
Mitsubishi Denki & Kabushiki Kaisha
Tsia H. Jey
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