Method of manufacturing semiconductor device having oxide isolat

Details Method of manufacturing semiconductor device having oxide isolat Method of manufacturing semiconductor device having oxide isolat

1975-07-17

1976-11-16

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29578, 29580, 148187, 148191, 357 50, 357 52, H01L 2176, H01L 2122, H01L 2704

Patent

active

039922324

ABSTRACT:
In a method of manufacturing a semiconductor device, wherein an element forming a region of one conductivity type isolated by an oxide layer is disposed on a semiconductor substrate of the opposite conductivity type, a ring-shaped high impurity concentration region of the opposite conductivity type is formed on a portion of the semiconductor substrate so as to surround the isolated region to thereby prevent the formation of a parasitic channel and to stabilize the surface potential of the substrate.

REFERENCES:
patent: 3341755 (1967-09-01), Husher et al.
patent: 3370995 (1968-02-01), Lowery et al.
patent: 3648125 (1972-03-01), Peltzer
patent: 3748545 (1973-07-01), Beale
patent: 3796612 (1974-03-01), Allison
patent: 3873383 (1975-03-01), Kooi
Kooi et al., "Selective Oxidation of Silicon - - - Applications," Semiconductor Silicon (Textbook), 1973, (Electrochem. Soc. Conf. Proc., May 13-18, 1973), pp. 860-879.
Peltzer et al., "Isolation Method - - - Memories," Electronics, Mar. 1, 1971, pp. 52-55.
Aarons, M. W., "Integrated Circuit Device - - - Technology," S.C.P. and Solid State Tech., Mar. 1965, pp. 42-45.

Affiliated with

Also associated with

Rating

Method of manufacturing semiconductor device having oxide isolat does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing semiconductor device having oxide isolat, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor device having oxide isolat will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-669267