Method of manufacturing semiconductor device having MIM...

Details Method of manufacturing semiconductor device having MIM... Method of manufacturing semiconductor device having MIM...

2005-07-19

2005-07-19

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

C438S386000, C438S396000

Reexamination Certificate

active

06919256

ABSTRACT:
A first metal film, a first interlayer insulating film, a second metal film, and a second interlayer insulating film are deposited in this order over a silicon nitride film. An opening penetrating the first and second interlayer insulating films and the first and second metal films is created, whereby a contact metal, to hold a to-be-formed lower electrode thereon, is exposed. A metal film is provided to cover the second interlayer insulating film. The opening is filled with the metal film. A main part and the uppermost fin (namely, the fin farthest from a substrate) of a lower electrode, are formed by the same process.

REFERENCES:
patent: 5834357 (1998-11-01), Kang
patent: 6174781 (2001-01-01), Dai et al.
patent: 6320244 (2001-11-01), Alers et al.
patent: 8-167702 (1996-06-01), None
patent: 2000-101047 (2000-04-01), None
patent: 2001-144266 (2001-05-01), None

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