Method of manufacturing semiconductor device having elements iso

Details Method of manufacturing semiconductor device having elements iso Method of manufacturing semiconductor device having elements iso

1993-02-09

1994-07-26

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 67, 437 31, 257506, H01L 21265, H01L 2970

Patent

active

053326830

ABSTRACT:
This invention relates to a method of manufacturing a semiconductor device having elements isolated by a trench. A trench is formed to surround an element region of a silicon substrate by anisotropic etching. A nonoxide film such as a silicon nitride film is selectively formed on the upper surface of the element region. Thermal oxidation is performed using the nonoxide film as a mask to form an oxide film on the inner face of the trench and the upper surface of a field region. Thereafter, a polysilicon layer is buried in the trench, and after the surface of the polysilicon layer is flattened, a capping oxide film is formed on the upper surface of the trench. In addition, a non-oxide film is formed to have an interval between the end of the nonoxide film and the trench of 2 .mu.m or more.

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Patent Abstracts of Japan, Publication No. JP 60136327, Jul. 19, 1985.

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