Fishing – trapping – and vermin destroying
Patent
1992-10-16
1993-06-22
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 44, 437193, H01L 21265
Patent
active
052216306
ABSTRACT:
A semiconductor device not aggravated in transistor characteristic even when an impurity region is formed by ion implantation using a gate electrode as a mask, and a method of manufacturing thereof are disclosed. The semiconductor device includes a gate electrode 10 implemented by a polycrystal silicon layer 4 having the crystal orientation of the crystal grains thereof arranged in a predetermined orientation, and a single crystal silicon layer 5 formed on the polycrystal silicon layer 4 having a crystal orientation identical to that of the polycrystal silicon layer 4. The channelling phenomenon in which B.sup.+ ions pass through to beneath the gate electrode 10 is prevented in forming an impurity region 6 by ion implantation to obtain a semiconductor device that does not have the characteristic of the formed transistor aggravated.
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MOS LSI Manufacturing Technology, Nikkel McGraw-Hill, pp. 89-91, 1985.
Kokawa Yoshiko
Koyama Tohru
Kusakabe Kenji
Nakamura Yasuna
Tamura Katsuhiko
Hearn Brian E.
Mitsubishi Denki & Kabushiki Kaisha
Picardat Kevin M.
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