Method of manufacturing semiconductor device having a planarized

Details Method of manufacturing semiconductor device having a planarized Method of manufacturing semiconductor device having a planarized

1995-03-08

1996-02-13

Fourson, George

Fishing, trapping, and vermin destroying

437228, 1566361, 216 38, H01L 21302, H01L 21463

Patent

active

054911133

ABSTRACT:
In a method of manufacturing a semiconductor device, an interlayer insulating film is formed along a surface of a semiconductor substrate having a stepped surface. A stopper surface is formed at least at a recess in the interlayer insulating film. The interlayer insulating film and the stopper film are polished until the interlayer insulating film and the stopper film are exposed on the same plane. The stopper film remaining after the polishing is etched and removed. The interlayer insulating film is polished and flattened.

REFERENCES:
patent: 5272117 (1993-12-01), Roth et al.
patent: 5298110 (1994-03-01), Schoenborn et al.
patent: 5395801 (1995-03-01), Doan et al.

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