Method of manufacturing semiconductor device having a fuse

Details Method of manufacturing semiconductor device having a fuse Method of manufacturing semiconductor device having a fuse

1998-10-23

1999-12-21

Tsai, Jey

Semiconductor device manufacturing: process

Making device array and selectively interconnecting

Using structure alterable to nonconductive state

438601, H01L 2182

Patent

active

060048344

ABSTRACT:
An interlayer insulating layer is formed to cover a fuse layer. A concave portion is provided on the surface of interlayer insulating layer located directly above fuse layer. A nitride layer as a passivation layer extends on the sidewalls of concave portion. In this way, a semiconductor device is obtained, the device having an improved moisture resistance, and in which a fuse can be easily blown by laser and a design rule of the region adjacent to the fuse can be improved.

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patent: 4853758 (1989-08-01), Fischer
patent: 5025300 (1991-06-01), Billig et al.
patent: 5241212 (1993-08-01), Motonami et al.
patent: 5578861 (1996-11-01), Kinoshita et al.
S. Wolf et al., "Silicon Processing for the VLSI Era", Lattice Press, Sunset Beach, California, vol. 1, Process Technology, 1986, pp. 192 and 199.

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