Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2007-03-23
2010-11-16
Culbert, Roberts (Department: 1716)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S710000, C438S736000, C438S737000, C216S067000
Reexamination Certificate
active
07833911
ABSTRACT:
A method of manufacturing a semiconductor device includes: etching a first film provided on a wafer in a chamber; removing at least part of reaction products deposited on a component in the chamber facing the wafer by the etching to cause a distribution state of the deposited reaction products to get closer to a uniform state; and then etching a second film provided on the wafer in the chamber.
REFERENCES:
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patent: 05-129246 (1993-05-01), None
patent: 2000-164582 (2000-06-01), None
patent: 2004-0074681 (2004-08-01), None
Korean Office action for Application No. 10-2007-005035 dated Feb. 20, 2009.
Aoki Katsuaki
Katsumata Hiroshi
Culbert Roberts
Kabushiki Kaisha Toshiba
Pearne & Gordon LLP
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