Method of manufacturing semiconductor device, apparatus of...

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Reexamination Certificate

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C438S710000, C438S736000, C438S737000, C216S067000

Reexamination Certificate

active

07833911

ABSTRACT:
A method of manufacturing a semiconductor device includes: etching a first film provided on a wafer in a chamber; removing at least part of reaction products deposited on a component in the chamber facing the wafer by the etching to cause a distribution state of the deposited reaction products to get closer to a uniform state; and then etching a second film provided on the wafer in the chamber.

REFERENCES:
patent: 5756400 (1998-05-01), Ye et al.
patent: 6527968 (2003-03-01), Wang et al.
patent: 05-129246 (1993-05-01), None
patent: 2000-164582 (2000-06-01), None
patent: 2004-0074681 (2004-08-01), None
Korean Office action for Application No. 10-2007-005035 dated Feb. 20, 2009.

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