Method of manufacturing semiconductor device and thermal...

Details Method of manufacturing semiconductor device and thermal... Method of manufacturing semiconductor device and thermal...

2011-03-01

2011-03-01

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S513000, C438S663000, C438S680000, C257SE21051, C257SE21077, C257SE21170, C257SE21208, C257SE21253, C257SE21267, C257SE21278, C257SE21298, C257SE21304, C257SE21311, C257SE21324, C257SE21593, C257SE21664

Reexamination Certificate

active

07897414

ABSTRACT:
A method of manufacturing a semiconductor device has forming a ferroelectric film over a substrate, placing the substrate having the ferroelectric film in a chamber substantially held in vacuum, introducing oxygen and an inert gas into the chamber, annealing the ferroelectric film in the chamber, and containing oxygen and the inert gas while the chamber is maintained sealed.

REFERENCES:
patent: 5736422 (1998-04-01), Lee et al.
patent: 6025205 (2000-02-01), Park et al.
patent: 6312567 (2001-11-01), Lee et al.
patent: 6653212 (2003-11-01), Yamanaka et al.
patent: 6843201 (2005-01-01), Kuznetsov et al.
patent: 11-171548 (1999-06-01), None
patent: 11-195614 (1999-07-01), None
patent: 2001-94064 (2001-04-01), None
patent: 2004-134731 (2004-04-01), None
patent: 2005-527972 (2005-09-01), None
patent: WO03/085343 (2003-10-01), None

Affiliated with

Also associated with

Rating

Method of manufacturing semiconductor device and thermal... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing semiconductor device and thermal..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor device and thermal... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2737769