Method of manufacturing semiconductor device and method of...

Details Method of manufacturing semiconductor device and method of... Method of manufacturing semiconductor device and method of...

2008-05-06

2008-05-06

Smith, Bradley K (Department: 2891)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C257SE21438

Reexamination Certificate

active

10983243

ABSTRACT:
A method of manufacturing a semiconductor device includes the steps of: exposing a semiconductor surface of a substrate; annealing the substrate in a hydrogen atmosphere at a hydrogen pressure between 200 Torr and 760 Torr and a temperature between 1000° C. and 1050° C. to planarize the exposed semiconductor surface; and forming a gate insulator film on the planarized semiconductor surface.

REFERENCES:
patent: 6630389 (2003-10-01), Shibata et al.
patent: 2003/0219948 (2003-11-01), Kuribayashi
patent: 10-012716 (1998-01-01), None
patent: 2003-229479 (2003-08-01), None
patent: 2003-282869 (2003-10-01), None

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