Method of manufacturing semiconductor device and flash memory

Details Method of manufacturing semiconductor device and flash memory Method of manufacturing semiconductor device and flash memory

2005-01-11

2005-01-11

Pert, Evan (Department: 2829)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C435S091500

Reexamination Certificate

active

06841487

ABSTRACT:
A semiconductor manufacturing method is mainly contemplated, improved to prevent an altered surface layer of a resist from being removed when a single patterned resist is used to provide dry-etch and wet-etch successively. On a semiconductor substrate an insulation film and a conductive layer are formed successively. On the conductive layer a patterned resist is formed. With the patterned resist used as a mask, the conductive layer is dry-etched. A surface layer of the patterned resist is partially removed. With the patterned resist used as a mask, the insulation film is wet-etched.

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