Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Patent
1998-10-12
2000-12-26
Elms, Richard
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
438151, 438152, 438166, H01L 2100
Patent
active
061658103
ABSTRACT:
A semiconductor device manufacturing method is provided for manufacturing semiconductor elements on a substrate through RTA (Rapid Thermal Annealing) using a lamp. A substrate is sequentially and preliminarily heated using a plurality of preliminary heating plates arranged for stepwise temperature rise before annealing the substrate using the RTA technique. After the heating process, a cooling step may be performed to the substrate to cool it stepwise. The annealing process can prevent a breakage in a substrate due to thermal stress, while the throughput increases.
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Elms Richard
Lebentritt Michael S.
Sanyo Electric Co,. Ltd.
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