Method of manufacturing semiconductor device and cutting...

Details Method of manufacturing semiconductor device and cutting... Method of manufacturing semiconductor device and cutting...

2005-11-29

2005-11-29

Nguyen, Ha (Department: 2812)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

C219S121390

Reexamination Certificate

active

06969669

ABSTRACT:
In the process of plasma dicing in which the semiconductor wafer6is divided into individual pieces by plasma, SiO2layer42and the protective layer43, which are formed covering the active layer41, are utilized as an etching stop layer for absorbing fluctuation of the etching rate in the first plasma dicing step in which the wafer base layer40is etched and cut off. Next, the second plasma dicing step is conducted in which the etching stop layer exposed by the first plasma dicing step is cut off with plasma of the second plasma generating gas capable of etching at a high etching rate, and heat damage is prevented which is caused when the protective sheet30is exposed to plasma for a long period of time.

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patent: 2 538 616 (1984-06-01), None
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