Method of manufacturing semiconductor device and apparatus...

Cleaning and liquid contact with solids – Processes – With work or work parts movable during treatment

Reexamination Certificate

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C134S002000, C134S026000, C134S030000, C134S031000, C134S033000, C134S034000, C134S036000, C134S037000, C134S038000, C134S042000, C134S902000

Reexamination Certificate

active

06890391

ABSTRACT:
The stripping agent is sprayed from the tip of the nozzle33onto the wafer surface, while the first supply nozzle33is actuated to scan from the central portion of the wafer to the outer portion thereof. This operation provides the situation, in which the interface of the residual droplet38is pulled back from the center of the wafer to the outer portion of the wafer by the surface tension of the stripping agent supplied from the nozzle. Meanwhile, the second supply nozzle36also scans at a same scanning speed as the first supply nozzle33scans. Vapor IPA is sprayed from the orifice of the second supply nozzle36. This provides that vapor IPA is sprayed onto the wafer surface immediately after the stripping agent is sprayed thereon from the first supply nozzle33, and the residual stripping agent on the wafer surface is efficiently replaced with IPA.

REFERENCES:
patent: 3957531 (1976-05-01), Tipping et al.
patent: 6430840 (2002-08-01), Jung
patent: 20040000330 (2004-01-01), Kwon et al.
patent: 20040074526 (2004-04-01), Aoki et al.
patent: 11-204491 (1999-07-01), None
patent: 11-214350 (1999-08-01), None
patent: 2000-058498 (2000-02-01), None

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