Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Reexamination Certificate
2008-04-18
2011-11-29
Wilczewski, Mary (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
C257S330000, C257SE29081, C257SE29104, C257SE29131, C257SE29257, C257SE29262, C257SE21065, C257SE21066, C257SE21054
Reexamination Certificate
active
08067776
ABSTRACT:
Methods of manufacturing a semiconductor device including a semiconductor substrate and a hetero semiconductor region including a semiconductor material having a band gap different from that of the semiconductor substrate and contacting a portion of a first surface of the semiconductor substrate are taught herein, as are the resulting devices. The method comprises depositing a first insulating film on exposed portions of the first surface of the semiconductor substrate and on exposed surfaces of the hetero semiconductor material and forming a second insulating film between the first insulating film and facing surfaces of the semiconductor substrate and the hetero semiconductor region by performing a thermal treatment in an oxidizing atmosphere.
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Hayashi Tetsuya
Hoshi Masakatsu
Tanaka Hideaki
Yamagami Shigeharu
Nissan Motor Co,. Ltd.
Wilczewski Mary
Young & Basile
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