Method of manufacturing semiconductor device and...

Details Method of manufacturing semiconductor device and... Method of manufacturing semiconductor device and...

2009-03-12

2010-11-09

Luu, Chuong Anh (Department: 2892)

Semiconductor device manufacturing: process

Making metal-insulator-metal device

C438S003000, C438S240000, C438S393000

Reexamination Certificate

active

07829476

ABSTRACT:
A method of manufacturing a semiconductor device has forming a capacitor having electrodes and a ferroelectric film provided therebetween above a substrate, forming a pad electrode electrically connected to one of the electrodes of the capacitor above the substrate, forming a protective film covering the pad electrode over the substrate, forming an opening in the protective film exposing at least a part of the pad electrode, bringing a measurement terminal into contact with the exposed surface of the pad electrode, etching the surface of the pad electrode after the measurement terminal is brought into contact therewith, and forming a hydrogen absorbing film on the protective film and the pad electrode exposed through the opening.

REFERENCES:
patent: 6432771 (2002-08-01), Ciavatti
patent: 6479899 (2002-11-01), Fukuda et al.
patent: 7425740 (2008-09-01), Liu et al.
patent: 7692227 (2010-04-01), Yamabi et al.
patent: 2005/0062170 (2005-03-01), Biggs et al.
patent: 2003-86624 (2003-03-01), None
patent: 2004-296643 (2004-10-01), None
patent: 2005-94013 (2005-04-01), None

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