Method of manufacturing semiconductor device and...

Details Method of manufacturing semiconductor device and... Method of manufacturing semiconductor device and...

2005-08-30

2005-08-30

Nguyen, Tuan H. (Department: 2813)

Semiconductor device manufacturing: process

Electron emitter manufacture

C438S713000, C438S735000

Reexamination Certificate

active

06936484

ABSTRACT:
An impurity precipitation region is formed by introducing an impurity, e.g., oxygen, into a silicon substrate or a silicon layer and thermally treating it, and performing high selectivity anisotropic etching with the precipitation region used as a micro mask. Thus, a cone (conic body or truncated conic body having an annular leading end) having a very sharp and slender needle shape with an aspect ratio of about 10 and a diameter of about 10 nm to 30 nm in the vicinity of its leading end is obtained with the micro mask used as the top. By forming an insulation layer and a drive electrode such as a gate electrode around the cone, the cone can be used for a field emission device, a single electron transistor, a memory device, a high frequency switching device, a probe of a scanning type microscope or the like.

REFERENCES:
patent: 4933058 (1990-06-01), Bache et al.
patent: 4968585 (1990-11-01), Albrecht et al.
patent: 5232568 (1993-08-01), Parent et al.
patent: 5295305 (1994-03-01), Hahn et al.
patent: 5367165 (1994-11-01), Toda et al.
patent: 5444244 (1995-08-01), Kirk et al.
patent: 5497656 (1996-03-01), Kado et al.
patent: 5587588 (1996-12-01), Kim
patent: 5614663 (1997-03-01), Itoh et al.
patent: 5780318 (1998-07-01), Hirano et al.
patent: 5844251 (1998-12-01), MacDonald et al.
patent: 5844252 (1998-12-01), Shiomi et al.
patent: 5910701 (1999-06-01), Takemura
patent: 5967873 (1999-10-01), Rabinowitz
patent: 5992268 (1999-11-01), Decker et al.
patent: 6036566 (2000-03-01), Baldi et al.
patent: 6066265 (2000-05-01), Galvin et al.
patent: 6069018 (2000-05-01), Song et al.
patent: 6130106 (2000-10-01), Zimlich
patent: 6132942 (2000-10-01), Woodworth et al.
patent: 6201401 (2001-03-01), Hellemans et al.
patent: 6227519 (2001-05-01), Yagi et al.
patent: 6270950 (2001-08-01), Bourdelais et al.
patent: 6285811 (2001-09-01), Aggarwal et al.
patent: 6328902 (2001-12-01), Hantschel et al.
patent: 6333598 (2001-12-01), Hsu et al.
patent: 6417016 (2002-07-01), Gilton et al.
patent: 63-051641 (1988-03-01), None
patent: 6-163481 (1994-06-01), None
patent: 7-118100 (1995-05-01), None
patent: 8-203863 (1996-08-01), None
patent: 8-250020 (1996-09-01), None
patent: 8-306752 (1996-11-01), None
patent: 9-232482 (1997-09-01), None
patent: 9-260312 (1997-10-01), None
patent: 10-188785 (1998-04-01), None
Seigo Kanemaru, et al., “Fabrication of Metal-Oxide-Semiconductor Field-Effect-Transistor-Structured Silicon Field Emitters With A Polysilicon Dual Gate”, Jpn. J. Appl. Phys., vol. 36, Part 1, No. 12B, Dec. 1997, pp. 7736-7740.
Yoshikazu Hori, et al., “New Sub-Micorn Size Si Field Emitter Arrays With Low Operation Voltage”, technical Report of The Institute of Electronics Information and Communication Engineers, ED94-95, 1994-12, pp. 1-8, (w/English Abstract).
Hayakawa et al; “Mechanism of Residue Formation in Silicon Trench Etching Using a Bromine-Based Plasma,” Jpn. J. Appl. Phys., vol. 37 (1998) pp. 5-9.

Affiliated with

Also associated with

Rating

Method of manufacturing semiconductor device and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing semiconductor device and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor device and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3457457