Method of manufacturing semiconductor device, and...

Details Method of manufacturing semiconductor device, and... Method of manufacturing semiconductor device, and...

2011-03-15

2011-03-15

Stark, Jarrett J (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S737000, C438S701000, C257S774000

Reexamination Certificate

active

07906436

ABSTRACT:
A method of manufacturing a semiconductor device which includes step of forming a lower resist film over an insulating interlayer; forming a first opening having a circular geometry in a plan view, and second to fifth openings arranged respectively on four sides of the first opening, in the lower resist film; and etching the film-to-be-etched while using the lower resist film as a mask, wherein in the step of etching the film-to-be-etched, a hardened layer is formed in a region of the lower resist film fallen between the first opening and each of the second to fifth openings, and the film-to-be-etched is etched while using the hardened layers as a mask, so as to form a contact hole having a rectangular geometry in a plan view in the film-to-be-etched at a position correspondent to the first opening of the lower resist film.

REFERENCES:
patent: 7598005 (2009-10-01), Yamamoto
patent: 2001/0036715 (2001-11-01), Schroeder
patent: 2006/0001174 (2006-01-01), Matsui
patent: 2009/0029294 (2009-01-01), Gonda
patent: 2010/0009298 (2010-01-01), Chen et al.
patent: 2004-134574 (2004-04-01), None
Chinese Office Action dated Apr. 26, 2010, with English translation.

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