Method of manufacturing semiconductor device, acid etching...

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C526S318430

Reexamination Certificate

active

11056094

ABSTRACT:
Disclosed is an acid etching resistance material comprising a compound having a repeating unit represented by the following general formula (1):(in the general formula (1), R1is a hydrogen atom or methyl group; R3is a cyclic group selected from an alicyclic group and an aromatic group; R4is a polar group; R2is a group represented by the following general formula (2); and j is 0 or 1):(in the general formula (2), R5is a hydrogen atom or methyl group).

REFERENCES:
patent: 5997952 (1999-12-01), Harris et al.
patent: 6280897 (2001-08-01), Asakawa et al.
patent: 6440636 (2002-08-01), Ushirogouchi et al.
patent: 6451501 (2002-09-01), Nozaki et al.
patent: 6673513 (2004-01-01), Choi et al.
patent: 6791117 (2004-09-01), Yoshitake et al.
patent: 6824957 (2004-11-01), Okino et al.
patent: 6825056 (2004-11-01), Asakawa et al.
patent: 6833230 (2004-12-01), Choi
patent: 6946233 (2005-09-01), Nishi et al.
patent: 2002/0187420 (2002-12-01), Barclay et al.
patent: 2004/0202961 (2004-10-01), Takechi et al.
patent: 2005/0031990 (2005-02-01), Okino et al.
patent: 2005/0031991 (2005-02-01), Okino et al.
patent: 2005/0037283 (2005-02-01), Okino et al.
patent: 2005/0037284 (2005-02-01), Okino et al.
patent: 2005/0048400 (2005-03-01), Okino et al.
patent: 2005/0059787 (2005-03-01), Benoit et al.
patent: 4-354382 (1992-12-01), None
patent: 2000-133837 (2000-05-01), None
patent: 2000-299494 (2000-10-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of manufacturing semiconductor device, acid etching... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing semiconductor device, acid etching..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor device, acid etching... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3758370

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.