Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2007-04-24
2007-04-24
Kebede, Brook (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C526S318430
Reexamination Certificate
active
11056094
ABSTRACT:
Disclosed is an acid etching resistance material comprising a compound having a repeating unit represented by the following general formula (1):(in the general formula (1), R1is a hydrogen atom or methyl group; R3is a cyclic group selected from an alicyclic group and an aromatic group; R4is a polar group; R2is a group represented by the following general formula (2); and j is 0 or 1):(in the general formula (2), R5is a hydrogen atom or methyl group).
REFERENCES:
patent: 5997952 (1999-12-01), Harris et al.
patent: 6280897 (2001-08-01), Asakawa et al.
patent: 6440636 (2002-08-01), Ushirogouchi et al.
patent: 6451501 (2002-09-01), Nozaki et al.
patent: 6673513 (2004-01-01), Choi et al.
patent: 6791117 (2004-09-01), Yoshitake et al.
patent: 6824957 (2004-11-01), Okino et al.
patent: 6825056 (2004-11-01), Asakawa et al.
patent: 6833230 (2004-12-01), Choi
patent: 6946233 (2005-09-01), Nishi et al.
patent: 2002/0187420 (2002-12-01), Barclay et al.
patent: 2004/0202961 (2004-10-01), Takechi et al.
patent: 2005/0031990 (2005-02-01), Okino et al.
patent: 2005/0031991 (2005-02-01), Okino et al.
patent: 2005/0037283 (2005-02-01), Okino et al.
patent: 2005/0037284 (2005-02-01), Okino et al.
patent: 2005/0048400 (2005-03-01), Okino et al.
patent: 2005/0059787 (2005-03-01), Benoit et al.
patent: 4-354382 (1992-12-01), None
patent: 2000-133837 (2000-05-01), None
patent: 2000-299494 (2000-10-01), None
Asakawa Koji
Fujimoto Akira
Ohashi Kenichi
Sasaki Takashi
Kabushiki Kaisha Toshiba
Kebede Brook
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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