Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1998-04-10

2000-02-08

Utech, Benjamin

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438740, 438743, 438744, H01L 21311

Patent

active

060228105

ABSTRACT:
An interconnection layer 3 in a floating state and an interlayer insulating film 6 are formed on a semiconductor substrate. A connection hole 4 penetrating the interlayer insulating film and the interconnection layer is formed by dry etching with fluorocarbon. Filled in the connection hole is a conductive member 5 which is electrically connected to the interconnection layer. Accordingly, an improved method for manufacturing a semiconductor device offering a reduced contact resistance even for an extremely small contact hole is obtained.

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