Etching a substrate: processes – Forming or treating article containing a liquid crystal...
Patent
1996-07-29
1998-10-20
Powell, William
Etching a substrate: processes
Forming or treating article containing a liquid crystal...
216 13, 216 18, 216 67, 438720, H01L 2100, B44C 122
Patent
active
058242350
ABSTRACT:
There is provided a technique which prevents semiconductor devices under fabrication from being destroyed by pulse-like high potentials applied by plasma without adding any special fabrication step. A first line extending to a gate electrode of a thin film transistor is formed. A first insulation film is formed on the first line. A second line connected to a source region of the thin film transistor is formed on the insulation film. A second insulation film is formed on the second line. Then, a conductive pattern is formed on the second insulation film. A discharge pattern is formed the first and/or second line, and the first and/or second line is cut simultaneously with the formation of the conductive pattern.
REFERENCES:
patent: 4792210 (1988-12-01), Maurice
patent: 5234541 (1993-08-01), Shannon et al.
Koyama Jun
Yamazaki Shunpei
Powell William
Semiconductor Energy Laboratory Co,. Ltd.
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