Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1990-05-14

1991-05-14

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 41, 437247, 437968, 148DIG78, H01L 21265

Patent

active

050155938

ABSTRACT:
In order to eliminate unwanted crystal defects generated by an ion implantation, a semiconductor substrate or an epitaxial layer, which is selectively subjected to an impurity ion implantation, is heat-treated in an inert gas atmosphere at 850.degree. to 1050.degree. C. to recrystallize the implanted region. Thereafter, the semiconductor substrate is heat-treated at 900.degree. to 1250.degree. C. in an atmosphere containing oxygen. For eliminating abnormal growth of grain boundaries in a polycrystalline semiconductor layer deposited on an insulating film the semiconductor layer is heat-treated at 900.degree. to 1100.degree. C. in an atmosphere containing oxygen. By applying at least one of these processes to usual fabrication methods, semiconductor devices with high reliabilty such as power MOSFETs will be provided.

REFERENCES:
patent: 4055444 (1977-10-01), Rao
patent: 4640721 (1987-02-01), Uehara et al.
Ghandhi, S. K.; VLSI Fabrication Principles, 1983, pp. 385-388.
IBM Technical Disclosure Bulletin, vol. 21, No. 4, September 1978, pp. 1434-1435; "Emitter Ion Implantation and Diffusion Process", J. L. Forneris et al.
Journal of the Electrochemical Society, vol. 124, No. 2, Feb. 1977, pp. 276-279; "The Diffusion of Implanted Boron in Silicon", R. P. Ricco et al.

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