Fishing – trapping – and vermin destroying
Patent
1992-05-12
1994-01-11
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437 37, 437 45, 437 48, 437 52, H01L 21426
Patent
active
052780783
ABSTRACT:
A method of manufacturing a semiconductor device having the steps of: forming a plurality of gate electrodes on a semiconductor substrate; forming an insulating film on every second gate electrode of the plurality of gate electrodes; coating resist on the whole surface of the semiconductor device to form a first resist film; patterning the first resist film and removing a predetermined area to form a second resist film, the end face of the second resist film being aligned with the surface of the gate electrode without the insulating film; implanting impurity ions, using the second resist film as a mask, at an acceleration voltage allowing to stop the implanted ions near to the surface of the semiconductor substrate under the gate electrode with the insulating film, of those gate electrodes not covered with the second resist film; removing the second resist film and coating resist on the whole surface of the semiconductor device to form a third resist film; patterning the third resist film and removing a predetermined area to form a fourth resist film, the end face of the fourth resist film being aligned with the surface of the gate electrode with the insulating film; and implanting the impurity ions, using the fourth resist film as a mask, at an acceleration voltage allowing to stop the implanted impurity ions near at the surface of the semiconductor substrate under the gate electrode without the insulating film among the gate electrodes not covered with the fourth resist film.
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Inagi Satoshi
Kanebako Kazunori
Chaudhuri Olik
Kabushiki Kaisha Toshiba
Ojan Ourmazd S.
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