Fishing – trapping – and vermin destroying
Patent
1991-01-24
1993-04-20
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 33, 437203, 437162, 437909, 148DIG9, 148DIG124, H01L 21265
Patent
active
052042766
ABSTRACT:
In the method of manufacturing a semiconductor device, a buffer oxide film, an oxidation-resistant film and a first poly-Si film containing a p-type impurity are successively formed to form a laminate structure on the n-type collector region, followed by forming a protective oxide film by CVD. Then, an opening portion reaching the oxidation-resistant film is formed, followed by forming a second protective insulation film to cover the surface of the first poly-Si film exposed at the side wall of the opening portion. The oxidation-resistant film is excessively etched using the protective insulation films as an etching mask so as to expose the buffer oxide film and to form a bore below the first poly-Si film. The exposed buffer oxide film is removed, followed by filling the bore with a second poly-Si film. Then, a heat treatment is performed under an oxidative atmosphere to form a thermal oxide film covering the surface of the second poly-Si film. At the same time, the p-type impurity contained in the first poly-Si film is diffused through the second poly-Si film into the collector region to form a p-type outer base region. Further, a p-type inner base region, n-type emitter region and an emitter electrode are formed.
REFERENCES:
patent: 4125426 (1978-11-01), Inayoshi et al.
patent: 4375999 (1983-03-01), Nawata et al.
patent: 4483726 (1984-11-01), Isaac et al.
patent: 4531282 (1985-07-01), Sakai et al.
patent: 4581319 (1986-04-01), Wieder et al.
patent: 4700458 (1987-10-01), Suzuki et al.
patent: 4800176 (1989-01-01), Kakumu et al.
patent: 4855248 (1989-08-01), Ariizumi et al.
patent: 4892837 (1990-01-01), Kudo
Tauber et al., Silicon Processing for the VLSI Era, vol. 1, pp. 335, 367, 1986.
Ting, "Tin Formed by Evaporation as a Diffusion Barrier Between Al and Si", J. Vac. Sci. Technol. 21(1) May/Jun. 1982 pp. 14-18.
Degen Kolb, "Aluminum Sputter Etching Using SiCl.sub.4 ", pp. 1150-1151, GTE Laboratories.
Chang, "Effects of Differential Etching and Masking Resist Preparation of the Quality of the Reactive-ion-etched Aluminum and Aluminum Alloys", Journal of Electronic Materials, vol. 13, No. 6, pp. 955-967, 1984.
Hirakawa Kenji
Itoh Nobuyuki
Katsumata Yasuhiro
Nakajima Hiroomi
Nihira Hiroyuki
Hearn Brian E.
Kabushiki Kaisha Toshiba
Nguyen Tuan
LandOfFree
Method of manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1525786