Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1990-06-26

1991-07-02

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437162, 437193, 437194, 437909, 148DIG11, 148DIG124, H01L 2188

Patent

active

050285505

ABSTRACT:
In a method of manufacturing a semiconductor device, when contact holes are to be formed in an insulating film formed on a monocrystalline or polycrystalline semiconductor layer, the contact holes can be formed using a polycrystalline semiconductor layer formed on the insulating film as a mask. Therefore, the lithographic step of forming the contact holes in the insulating film formed on the monocrystalline or polycrystalline semiconductor layer can be eliminated.

REFERENCES:
patent: 4125426 (1978-11-01), Inayoshi et al.
patent: 4375999 (1983-03-01), Nawata et al.
patent: 4465528 (1984-08-01), Goto
patent: 4525922 (1985-07-01), Kiriseko
patent: 4590666 (1986-05-01), Goto
patent: 4978630 (1990-12-01), Kim

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