Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1991-07-29

1993-06-15

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 45, 437 48, 437150, H01L 21265, H01R 2122

Patent

active

052197760

ABSTRACT:
A method of manufacturing a semiconductor device is manufactured as a MOS-type mask ROM in which the threshold voltage in a transistor used as a memory cell varies from stage to stage by ion implantation. As a result, a period for storing data can be shortened by writing data in the late stage of the manufacturing process, and specified ions are implanted with multi-stage energy with a gate electrode of the transistor covered with an insulating film of a layer insulating film or of a layer insulting film and a protective film to vary the threshold voltage stably.

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