Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1998-08-27

2000-12-12

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

710712, 710718, H01L 21302

Patent

active

061598615

ABSTRACT:
In a method of manufacturing a semiconductor device which has a semiconductor substrate, a channel layer formed on the semiconductor substrate and an insulating film deposited on the channel layer, an opening corresponding to a gate electrode pattern is formed in the insulating film by the use of a photoresist film. The channel layer contains crystal components while the photo-resist film contains carbon. The insulating film is etched to exposed said channel layer after removing the photoresist film. In consequence, no reacted production is formed between the crystal components and the carbon on the exposed channel layer.

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