Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1999-05-26

2000-12-05

Dang, Trung

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

438335, 438341, H01L 21331

Patent

active

061566179

ABSTRACT:
When a bipolar transistor having a buried layer is formed, the withstanding pressure of the bipolar transistor is deteriorated by upward diffusion to a great extent from the buried layer. When a buried layer is formed in a semiconductor substrate, by providing a region without impurity introduction, upward diffusion from the buried layer is controlled to prevent deterioration in the withstanding pressure.

REFERENCES:
patent: 5254486 (1993-10-01), Alter
patent: 5719082 (1998-02-01), Violette
patent: 5976940 (1999-11-01), Gomi et al.
patent: 5994162 (1999-11-01), Burghartz et al.

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