Semiconductor device manufacturing: process – Semiconductor substrate dicing
Reexamination Certificate
2006-11-08
2011-11-29
Nhu, David (Department: 2895)
Semiconductor device manufacturing: process
Semiconductor substrate dicing
C438S113000, C438S513000, C257SE21006, C257SE21054, C257SE21077, C257SE21095, C257SE21134, C257SE21218, C257SE21237, C257SE21324, C257SE21347
Reexamination Certificate
active
08067296
ABSTRACT:
The present invention provides a method of manufacturing a semiconductor device in which a thinned substrate of a semiconductor or semiconductor device is handled without cracks in the substrate and treated with heat to improve a contact between semiconductor back surface and metal in a high yield and a semiconductor device may be manufactured in a high yield. In the method of manufacturing a semiconductor device according to the present invention, a notched part is formed from a surface to a middle in a semiconductor substrate by dicing and the surface of the substrate is fixed to a support base. Next, a back surface of the substrate is ground to thin the semiconductor substrate and then a metal electrode and a carbon film that is a heat receiving layer are sequentially formed on the back surface of the substrate. Next, the carbon film is irradiated with light at a power density of 1 kW/cm2to 1 MW/cm2for a short time of 0.01 ms to 10 ms to transfer heat from the carbon film and alloy an interface between a semiconductor and the metal electrode. Subsequently, the semiconductor substrate is separated at the notched part into pieces.
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Kawana Yoshiyuki
Sano Naoki
Hightec Systems Corporation
Nhu David
Stevens David R.
Stevens Law Group
Success International Corporation
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