Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1992-03-24

1993-05-25

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 99, H01L 21336, H01L 21205

Patent

active

052139913

ABSTRACT:
In a method of making a MOSFET-type semiconductor device of this invention, a surface of a semiconductor substrate is covered in a predetermined pattern with an insulating layer comprising a silicon-nitride-containing film or with an insulating layer whose top surface and side surfaces bear a silicon-nitride-containing film, thereby forming on the semiconductor substrate a recess region at which the semiconductor substrate is exposed. An epitaxial silicon film and polycrystalline silicon film are formed simultaneously on the exposed semiconductor substrate and on the insulating film, respectively. A whole channel region and a part of source and drain diffused-layer regions are formed in the epitaxial silicon film, and source and drain diffused-layer regions are formed in the polycrystalline silicon film. A gate electrode of this MOSFET-type semiconductor device may be formed at the recess region by a self-align method.

REFERENCES:
patent: 3189973 (1965-06-01), Edwards et al.
patent: 3600651 (1971-08-01), Duncan
patent: 4041518 (1977-08-01), Shimizu et al.
patent: 4381202 (1983-04-01), Mori et al.
patent: 4462847 (1984-07-01), Thompson et al.
patent: 4504332 (1985-03-01), Shinada
patent: 4717689 (1988-01-01), Maas et al.
patent: 4966861 (1990-10-01), Mieno et al.
Patent Abstracts of Japan, vol. 8, No. 247 (E-278) (1684). Nov. 13, 1984 (1 page).
Wolf and Tauber, Silicon Processing for the VLSI Era, vol. 1: Process Technology, Lattice Press, 1986, pp. 142-143.
Claasen et al., "The Nucleation of CVD Silicon on SiO.sub.2 and Si.sub.3 N.sub.4 Substrates", J. Electrochem. Soc., vol. 128, No. 6, Jun. 1981, pp. 1353-1359.

Affiliated with

Also associated with

Rating

Method of manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-897054