Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2007-05-17

2010-11-23

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C257S315000

Reexamination Certificate

active

07838961

ABSTRACT:
A semiconductor device includes a semiconductor substrate having trenches extending thereinto. A trench type insulating film fills the trenches. The trench type insulating film includes a first and second insulating film and is laminated in a portion of the trenches.

REFERENCES:
patent: 5702977 (1997-12-01), Jang et al.
patent: 6245641 (2001-06-01), Shiozawa et al.
patent: 6355517 (2002-03-01), Sunami et al.
patent: 6486517 (2002-11-01), Park
patent: 6905967 (2005-06-01), Tian et al.
patent: 6939817 (2005-09-01), Sandhu et al.
patent: 7160787 (2007-01-01), Heo et al.
patent: 2005/0006697 (2005-01-01), Hsieh
patent: 2005/0142725 (2005-06-01), Jung et al.
patent: 2005/0153519 (2005-07-01), Lu et al.
patent: 2005/0170608 (2005-08-01), Kiyotoshi et al.
patent: 2005/0179112 (2005-08-01), Belyansky et al.
patent: 2005/0221559 (2005-10-01), Sumino et al.
patent: 2002-110780 (2002-04-01), None

Affiliated with

Also associated with

Rating

Method of manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4244254