Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2008-06-24

2010-06-08

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Gettering of substrate

By implanting or irradiating

C438S680000, C438S687000, C257SE21170, C257SE21230, C257SE21249, C257SE21267, C257SE21319, C257SE21304, C257SE21585

Reexamination Certificate

active

07732304

ABSTRACT:
A method of manufacturing a semiconductor device according to embodiments includes forming an interlayer dielectric film with a damascene pattern over a semiconductor substrate having a lower metal wire. A seed layer may be formed over the interlayer dielectric film including the damascene pattern. Impurities generated during the formation of the seed layer be removed through an annealing process using H2. A copper wire may then be formed by filling the damascene pattern.

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patent: 6350675 (2002-02-01), Chooi et al.
patent: 6506680 (2003-01-01), Kim et al.
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patent: 10-2001-0045454 (2001-06-01), None
patent: 10-2004-0056030 (2004-06-01), None

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