Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2007-02-15

2010-11-23

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

C438S108000, C257SE21599

Reexamination Certificate

active

07838394

ABSTRACT:
A semiconductor substrate in a wafer state having one surface provided thereon a plurality of external connection electrodes is stacked onto a support film. The wafer-state semiconductor substrate stuck on the support film is cut into a plurality of chip size semiconductor substrates, whereby the adjacent semiconductor substrates are separated from each other, and each semiconductor substrate is provided with at least one of the external connection electrodes. At least one protection film is formed on the other surface of the chip size semiconductor substrates, and on a peripheral side surface thereof that the chip size semiconductor substrates, which are adjacent to each other, are separated from each other.

REFERENCES:
patent: 2004/0207082 (2004-10-01), Yamano et al.
patent: 2001-332643 (2001-11-01), None

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