Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2006-10-30

2009-06-23

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C257SE27104

Reexamination Certificate

active

07550302

ABSTRACT:
The present invention provides a method of manufacturing a semiconductor device. The method includes the steps of forming a first interlayer insulating film over a silicon substrate; forming a first conductive film on the first interlayer insulating film; forming a first ferroelectric film, which is crystallized, on the first conductive film; annealing the first ferroelectric film; after the annealing, forming, on the first ferroelectric film, a second ferroelectric film made of an amorphous material or a microcrystalline material; forming a second conductive film on the second ferroelectric film; and forming a capacitor by patterning the first and second conductive films and the first and second ferroelectric films.

REFERENCES:
patent: 6812510 (2004-11-01), Horri et al.
patent: 6855974 (2005-02-01), Matsuura et al.
patent: 2002/0127867 (2002-09-01), Lee
patent: 2004/0135183 (2004-07-01), Matsuura et al.
patent: 2004/0164323 (2004-08-01), Joo et al.
patent: 2005/0233476 (2005-10-01), Tatsunari
patent: 2006/0231880 (2006-10-01), Yamakawa et al.
patent: 2004-22702 (2004-01-01), None
patent: 2004-186517 (2004-07-01), None
patent: 2004-214569 (2004-07-01), None

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