Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2007-01-30

2009-11-03

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making passive device

Resistor

C438S383000, C257S154000, C257S350000, C257SE21004, C257SE21005

Reexamination Certificate

active

07611957

ABSTRACT:
The invention provides a method of manufacturing a semiconductor device having a semiconductor resistor layer, which reduces a difference between a theoretical resistance value and a measured resistance value. An interlayer insulation film is formed on the whole surface of a semiconductor substrate, and then the interlayer insulation film is selectively etched to form contact holes partially exposing a polysilicon resistor layer, a source region and a drain region. The patterning size of the polysilicon resistor layer is designed by defining the lengths between the adjacent contact holes on the polysilicon resistor layer as the lengths of resistor elements. Then, ion implantation is performed to the polysilicon resistor layer through the contact holes to form low resistance regions (regions where high concentration of impurities are implanted) on the polysilicon resistor layer. After the ion implantation, heat treatment (annealing) is performed at lower temperature than in heat treatment for forming the source region and the drain region.

REFERENCES:
patent: 5852311 (1998-12-01), Kwon et al.
patent: 7112535 (2006-09-01), Coolbaugh et al.
patent: 2005/0130442 (2005-06-01), Visokay et al.
patent: 2006/0049484 (2006-03-01), Nomura
patent: 05-129294 (1993-05-01), None
Polysilicon Resistors Compatible with Bipolar Integrated Circuits and Method of Manufacture. IBM Technical Disclosure Bulletin, Oct. 1982, US.

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