Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2008-10-09

2009-11-24

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

By electromagnetic irradiation

C438S460000, C438S461000, C438S462000, C438S464000, C257SE21499

Reexamination Certificate

active

07622366

ABSTRACT:
A method of manufacturing a semiconductor device by which a wafer with devices formed in a plurality of regions demarcated by a plurality of streets formed in a grid pattern in the face-side surface of the wafer is divided along the streets into individual devices, and an adhesive film for die bonding is attached to the back-side surface of each of the devices. The adhesive film is attached to the back-side surface of the wafer divided into individual devices by exposing cut grooves formed along the streets by a dicing-before-grinding method, and thereafter the adhesive film is irradiated with a laser beam along the cut grooves through the cut grooves from the side of a protective tape adhered to the face-side surface of the wafer, so as to fusion-cut the adhesive film along the cut grooves.

REFERENCES:
patent: 6939785 (2005-09-01), Kajiyama et al.
patent: 2006/0197260 (2006-09-01), Yoshikawa et al.
patent: A 2000-182995 (2000-06-01), None
patent: A 2002-118081 (2002-04-01), None

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