Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2008-09-17

2009-11-10

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

C438S107000, C438S110000, C438S124000, C438S127000, C257SE21502, C257SE21511

Reexamination Certificate

active

07615408

ABSTRACT:
An internal connecting terminal12is formed on electrode pads23of a plurality of semiconductor chips11formed on a semiconductor substrate35, and there is formed a resin member13having a resin member body13-1and a protruded portion13-2and covering the semiconductor chips11on which the internal connecting terminal12is formed, a metal layer39is formed on the resin member body13-1and the protruded portion13-2is used as an alignment mark to form a resist film48covering the metal layer39in a part corresponding to a region in which a wiring pattern14is formed and to then carry out etching over the metal layer39by using the resist layer48as a mask, thereby forming the wiring pattern14which is electrically connected to the internal connecting terminal12.

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