Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1998-01-29

1999-12-07

Utech, Benjamin

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438712, 438723, 438724, H01L 213065, H01L 21311, H01L 21328

Patent

active

059983027

ABSTRACT:
In a semiconductor device manufacturing method for etching an insulating film on the surface of a silicon semiconductor to expose the surface of the silicon semiconductor, and then forming a thin film so as to cover at least the etched portion. Simultaneously with or after etching, an SiC film is formed on the surface of a semiconductor which is exposed by the etching, and a thin film is formed on the SiC film without removing the SiC film. Specifically, the etching is performed by using carbon-based etching gas, for example, to form the SiC film simultaneously with the etching.

REFERENCES:
patent: 3577285 (1971-05-01), Rutz
patent: 5021121 (1991-06-01), Groechel et al.
patent: 5756391 (1998-05-01), Tsuchiaki

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